抽象的

Detecting Topography of WO3 Semiconductor by Atomic Force Microscope (AFM) and Scanning Tunneling Microscope (STM)

Anwar QA


The morphology of WO3 is studied by AFM microscopy in order to specify the roughness which usually controls the movement of a free electron between the different layers which is fabricated the sensor. Additionally, STM microscopy gives the electrical characteristics of the sample by (STS) in a nanoscopic scale. As well as the electronic cloud which located in the middle distance between atoms and resulted by insertion of their electrons.


索引于

  • 中国社会科学院
  • 谷歌学术
  • 打开 J 门
  • 中国知网(CNKI)
  • 引用因子
  • 宇宙IF
  • 电子期刊图书馆
  • 研究期刊索引目录 (DRJI)
  • 秘密搜索引擎实验室
  • ICMJE

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