抽象的

On increasing of integration rate of multi-channel heterotransistors

E.L.Pankratov, E.A.Bulaeva


In this paper we consider an approach to increase integration rate of foeld-effect heterotransistors. The approach based on manufacturing a heterostructure with required configuration, doping of required areas of the heterostructure by diffusion or ion implantation and optimized annealing of dopant and/or radiation defects. Framework this paper we consider a possibility to manufacture with several channels. Manufacturing multichannel transistors gives us a possibility the to increase integration rate of transistors and to increase electrical current through the transistor.


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  • 中国社会科学院
  • 谷歌学术
  • 打开 J 门
  • 中国知网(CNKI)
  • 引用因子
  • 宇宙IF
  • 电子期刊图书馆
  • 研究期刊索引目录 (DRJI)
  • 秘密搜索引擎实验室
  • ICMJE

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