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Synthesis of Si3N4 in the nanopores of silica gel matrix by in-situ generation of nitrogen

D.K.Mandala, S.Mukherjee, G.C.Das, K.K.Chattopadhyay, M.K.Mitra


Nanosized silicon nitride has been prepared reacting tetraethyl-orthosilicate, n-decanol and ammonium nitrate at temperatures between 800 and 10000C under argon atmosphere. An innovative technique has been used for the synthesis of silicon nitride by in-situ generation of nitrogen through a solgel route. The structure and phase composition have been characterized by infrared spectroscopy, transmission electron microscopy and X-ray diffraction. The average particle size of Si3N4 was in the range 6-12nmunder various reaction conditions. The probable reaction mechanism of Si3N4 formation is also deduced.


索引于

  • 中国社会科学院
  • 谷歌学术
  • 打开 J 门
  • 中国知网(CNKI)
  • 引用因子
  • 宇宙IF
  • 电子期刊图书馆
  • 研究期刊索引目录 (DRJI)
  • 秘密搜索引擎实验室
  • ICMJE

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